MOSFET and BJT Basis of amplifiers Obtaining linear amplification
Small-signal voltage Gain Equivalent-circuit models: model and T model Basic configurations and Biasing Analyze discrete-circuit amplifiers MOSFET
1 2 = h ) (1+ ) ( 2
( ) =
[ ] 1
hh hh = BJT
Collector current Base current Emitter current
VT : the thermal potential is common-emitter current gain Minority-Carrier Distribution
Equivalent Circuit Models 6.3 BJT Circuit at DC Use simple model: |VBE|=0.7V for a conducting transistor and |VCE|=0.2V for a saturated transistor
Accurate model will increase complexity and impede insight in design SPICE simulation in the final stage of design Basis of amplifiers
7.1.3 The voltage-transfer characteristics VTC is non-linear: For BJT: Obtaining Linear Amplification by Biasing the
Transistor A dc voltage VGS is selected to obtain operation at a point Q on the segment AB of the VTC Q: bias point or dc operation point, or quiescent point
The signal to be amplified is vgs(t) Example 7.1 Solution: VGS=0.6V, VOV=0.2V
13 Small-Signal Operation and Models 7.2.1 The MOSFET Case 14
The signal current in the drain terminal Small-signal condition: 15
Small-signal voltage gain Modeling the Body effect 17
Collector current and Transcoductance If: 18 Equivalent
circuit models 19 20
Configurations 7.4 Biasing 1. To establish in the drain (collector) a dc current that is predictable, and insensitive to
variations in temperature and to large variations in parameter values between devices of the same type; 2. To locate the dc operating point in the active region and allow required output signal swing without the transistor leaving the
active region. 22 Biasing The MOSFET case
- E.g., biasing by fixing VG and connecting a Rs Example 7.11 Solution: design the resistance by distributing VDD into 3 equal part on RD, transistor VDS and RS
(each part = 5 V) 24 7.5 Discrete-Circuit Amplifiers (self-reading) A. A common-source (CS) amplifier
25 C. A CE amplifier with an emitter resistance Re With Re must use T Model
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